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2D NAND在進(jìn)入1xnm節(jié)點之后，器件耐久性和數(shù)據(jù)保持特性持續(xù)退化，單元之間的耦合效應(yīng)難以克服，很難解決集成度提高和成本控制的矛盾，進(jìn)一步發(fā)展面臨瓶頸。發(fā)展3D NAND已經(jīng)是大勢所趨。近期全球3D NAND的發(fā)展迎來少見的紅火，之前認(rèn)為僅三星獨家領(lǐng)先的態(tài)勢，可能需要重新思考，至少各方之間的差距正逐步縮小。因為誰都不愿在未來落后。

一、MP2456升降壓芯片完整信息介紹

0.5A, 50V, 1.2MHz 降壓變換器，采用 TSOT23-6 封裝

二、MP6631升降壓芯片完整信息介紹

? 4V Input, 3A Peak Phase Current, Three-Phase BLDC Motor Driver

? 3.6V to 24V Operating Input Voltage (VIN) Range

? Up to 3A of Peak Phase Current

? Integrated 160m? High-Side MOSFETs (HS-FETs) and Low-Side MOSFETs (LSFETs)

? Sinusoidal Drive

? Supports 0V to 1.2V DC Input or 1kHz to 100kHz Pulse-Width Modulation (PWM) Input

? Supports Triple-Hall or Single-Hall Element Differential Input

? Closed-/Open-Loop Speed Control

? Direction/Brake Input

? Power-Save Mode

? 5s/4.5s Lock Protection

? Over-Current Protection (OCP)

? Single-Pulse or Triple-Pulse FG Output per Electrical Cycle

? FG Signal: Rotational Speed Indication

? Soft Start (SS) for Low Noise and Current Overshoot

? Available in a QFN-26 (3mmx4mm) Package